Invention Grant
- Patent Title: Light-emitting element wafer, light emitting element, electronic apparatus
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Application No.: US15240266Application Date: 2016-08-18
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Publication No.: US09960206B2Publication Date: 2018-05-01
- Inventor: Daisuke Saito , Hiroki Naito , Takahiro Koyama , Sayaka Aoki , Arata Kobayashi
- Applicant: Sony Semiconductor Solutions Corporation
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Dentons US LLP
- Priority: JP2013-121462 20130610
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/00 ; H01L33/30 ; H01L33/44 ; H01L33/46 ; H01L33/24 ; H01L33/62 ; H01L33/20

Abstract:
A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.
Public/Granted literature
Information query
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