- Patent Title: Semiconductor heterobarrier electron device and method of making
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Application No.: US14801919Application Date: 2015-07-17
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Publication No.: US09960249B2Publication Date: 2018-05-01
- Inventor: Pankaj B Shah
- Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee Address: US DC Washington
- Agent Lawrence E. Anderson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/93 ; H01L29/04 ; H01L29/20 ; H01L29/205
Abstract:
A method of substantially offsetting polarization charges in an electronic device having a heterobarrier comprising providing a substrate; providing at least one pair of stacks of semiconductor materials; one of the pair of stacks having one or more of spontaneous and piezoelectric polarity where the total polarization charge is opposite to the other of the pair of stacks; whereby due to the opposing polarities, the polarization is balanced and the pair of stacks operate to store electrical energy.
Public/Granted literature
- US20150325676A1 Semiconductor Heterobarrier Electron Device And Method of Making Public/Granted day:2015-11-12
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