Invention Grant
- Patent Title: Semiconductor devices, power semiconductor devices, and methods for forming a semiconductor device
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Application No.: US15288243Application Date: 2016-10-07
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Publication No.: US09960268B2Publication Date: 2018-05-01
- Inventor: Markus Zundel , Christian Kampen , Jacob Tillmann Ludwig
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015117578 20151015; DE102016118543 20160929
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/10 ; H01L29/08 ; H01L29/40
Abstract:
A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion. A majority of dopants within the first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer. Further, a majority of dopants within the second drift region portion are a second species of dopants. Additionally, the semiconductor device includes a trench extending from a surface of the semiconductor layer into the semiconductor layer. A vertical distance of a border between the first drift region portion and the second drift region portion to the surface of the semiconductor layer is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench.
Public/Granted literature
- US20170110572A1 Semiconductor Devices, Power Semiconductor Devices, and Methods for Forming a Semiconductor Device Public/Granted day:2017-04-20
Information query
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