Invention Grant
- Patent Title: Light emitting diode with high efficiency
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Application No.: US15288043Application Date: 2016-10-07
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Publication No.: US09960318B2Publication Date: 2018-05-01
- Inventor: Tae Gyun Kim , Joon Hee Lee , Ki Hyun Kim , Sung Su Son
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2015-0071906 20150522; KR10-2016-0048327 20160420
- Main IPC: H01L33/10
- IPC: H01L33/10 ; H01L33/14 ; H01L33/38

Abstract:
A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers, an active layer, a first electrode electrically connected to the first conductive type semiconductor layer, a current blocking layer disposed on a lower surface of the light emitting structure, and a second electrode electrically connected to the second conductive type semiconductor layer. The second electrode includes a first reflective metal layer adjoining the second conductive type semiconductor layer, and a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer, and adjoining the second conductive type semiconductor layer. A contact resistance between the second reflective metal layer and the second conductive type semiconductor layer is higher than a contact resistance between the first reflective metal layer and the second conductive type semiconductor layer.
Public/Granted literature
- US20170025571A1 LIGHT EMITTING DIODE WITH HIGH EFFICIENCY Public/Granted day:2017-01-26
Information query
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