Invention Grant
- Patent Title: Method of fabricating an organic photodiode with dual electron blocking layers
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Application No.: US15338801Application Date: 2016-10-31
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Publication No.: US09960353B2Publication Date: 2018-05-01
- Inventor: Chin-Wei Liang , Hsing-Lien Lin , Cheng-Yuan Tsai , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L51/00 ; H01L51/42

Abstract:
Embodiments of forming an image sensor with an organic photodiode are provided. The organic photodiode uses dual electron-blocking layers formed next to the anode of the organic photodiode to reduce dark current. By using dual electron-blocking layers, the values of highest occupied molecular orbital (HOMO) for the neighboring anode layer and the organic electron-blocking layer are matched by one of the dual electron-blocking layers to form a photodiode with good performance. The values of the lowest occupied molecular orbital (LOMOs) of the dual electron-blocking layers are selected to be lower than the neighboring anode layer to reduce dark current.
Public/Granted literature
- US20170047517A1 METHOD OF FABRICATING AN ORGANIC PHOTODIODE WITH DUAL ELECTRON BLOCKING LAYERS Public/Granted day:2017-02-16
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