Invention Grant
- Patent Title: Method for making thin film transistor
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Application No.: US15662253Application Date: 2017-07-27
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Publication No.: US09960354B1Publication Date: 2018-05-01
- Inventor: Dong-Qi Li , Yang Wei , Kai-Li Jiang , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN201610932307 20161031
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05 ; H01L51/10 ; G01R31/265 ; G01R31/26

Abstract:
A method for making thin film transistor includes: providing a gate electrode and forming an insulating layer on the gate electrode; providing a carbon nanotube film comprising a plurality of metallic carbon nanotubes and a plurality of semiconducting carbon nanotubes; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope to take photo of the carbon nanotube film to distinguish the plurality of metallic carbon nanotubes and the plurality of semiconducting carbon nanotubes; removing the metallic carbon nanotubes, and forming a source electrode and a drain electrode on a surface of the semiconducting layer.
Public/Granted literature
- US20180123046A1 METHOD FOR MAKING THIN FILM TRANSISTOR Public/Granted day:2018-05-03
Information query
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