Invention Grant
- Patent Title: Low voltage switching gate driver under a high voltage rail
-
Application No.: US15155457Application Date: 2016-05-16
-
Publication No.: US09960755B2Publication Date: 2018-05-01
- Inventor: Zakaria Mengad
- Applicant: Dialog Semiconductor (UK) Limited
- Applicant Address: GB London
- Assignee: Dialog Semiconductor (UK) Limited
- Current Assignee: Dialog Semiconductor (UK) Limited
- Current Assignee Address: GB London
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H03K5/08
- IPC: H03K5/08 ; H03K5/24 ; H03K17/687 ; H03K17/042

Abstract:
A switching gate driver and method of operating the gate driver is described. The gate driver includes a first voltage source, and a clamping voltage source configured to have a voltage that is less than that of the first voltage source. There is also a current path, for initial charging of a gate voltage of the switching gate, between the first voltage source and a ground source; and a comparator which is configured to clamp the gate voltage to the clamping voltage source as it approaches the voltage of said clamping voltage source.
Public/Granted literature
- US20170331466A1 Low Voltage Switching Gate Driver under a High Voltage Rail Public/Granted day:2017-11-16
Information query
IPC分类: