Invention Grant
- Patent Title: Thin film transistor gate voltage supply circuit
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Application No.: US14916981Application Date: 2016-01-06
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Publication No.: US09960761B2Publication Date: 2018-05-01
- Inventor: Dan Cao
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201510925798 20151214
- International Application: PCT/CN2016/070314 WO 20160106
- International Announcement: WO2017/101181 WO 20170622
- Main IPC: H03K17/14
- IPC: H03K17/14 ; H03K19/20 ; G09G3/36

Abstract:
The present invention provides a thin film transistor gate voltage supply circuit, and the thin film transistor gate voltage supply circuit is employed to supply a gate voltage for a thin film transistor, and the thin film transistor gate voltage supply circuit comprises a voltage generation circuit and a temperature compensation circuit, and the voltage generation circuit is employed to generate an original voltage, and the temperature compensation circuit is electrically coupled to the voltage generation circuit, and the temperature compensation circuit is employed to detect an ambient temperature, and as the ambient temperature is smaller than a preset temperature, the temperature compensation circuit compensates the original voltage according to a difference value of the ambient temperature and the preset temperature to obtain a first voltage, and supplies the first voltage to a gate of the thin film transistor to drive the thin film transistor normally work.
Public/Granted literature
- US20170302264A1 THIN FILM TRANSISTOR GATE VOLTAGE SUPPLY CIRCUIT Public/Granted day:2017-10-19
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