Invention Grant
- Patent Title: Startup circuit
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Application No.: US15515410Application Date: 2015-08-31
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Publication No.: US09960762B2Publication Date: 2018-05-01
- Inventor: Tetsuya Kajita
- Applicant: Azbil Corporation
- Applicant Address: JP Tokyo
- Assignee: Azbil Corporation
- Current Assignee: Azbil Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-198156 20140929
- International Application: PCT/JP2015/074621 WO 20150831
- International Announcement: WO2016/052042 WO 20160407
- Main IPC: H02M1/36
- IPC: H02M1/36 ; H03K17/22 ; G05F3/26 ; G05F3/30 ; H02M3/04

Abstract:
Disclosed is a startup circuit comprises a current path comprising a circuit including a P-channel MOS transistor, a P-channel MOS transistor, and an N-channel MOS transistor connected in series. After a constant current circuit is started, the N-channel MOS transistor is turned on, an operating current is fed through the current path, and an N-channel MOS transistor is turned off to cut off a startup current. After the startup current is cut off, the gate voltage of the P-channel MOS transistor is controlled by the voltage (bias voltage during operation of the constant current circuit) of a node, a drain-source voltage of the P-channel MOS transistor is reduced, and the operating current flowing through the current path is limited.
Public/Granted literature
- US20170230044A1 STARTUP CIRCUIT Public/Granted day:2017-08-10
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