Invention Grant
- Patent Title: Insulated gate bipolar transistor driving circuit
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Application No.: US15108593Application Date: 2015-12-22
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Publication No.: US09960766B2Publication Date: 2018-05-01
- Inventor: Qingmeng Wang , Xiaoyan Han
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE ENERGY TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Beijng
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Beijng
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201510415519 20150715
- International Application: PCT/CN2015/098214 WO 20151222
- International Announcement: WO2017/008441 WO 20170119
- Main IPC: H03K17/78
- IPC: H03K17/78 ; H03F1/52 ; H03F3/21 ; H03F3/26 ; H03K5/08 ; H03F3/08 ; H03F3/30 ; H03K17/60 ; H03K17/16

Abstract:
The present disclosure provides an IGBT driving circuit, including an optocoupler chip and a power amplification circuit. The optocoupler chip includes an isolation amplification unit and a fault protection unit, and the fault protection unit includes a desaturation module and a fault feedback module. The desaturation module is configured to transmit a warning signal to the fault feedback module when detecting that a potential of a collector of the IGBT is overhigh or the potential of the collector of the IGBT changes overfast. The fault feedback module is configured to transmit a fault control signal to the external controller after receiving the warning signal so as to control the external driving signal outputted by the external controller and enable the isolation amplification unit to output an IGBT driving signal for controlling a shutdown of the IGBT.
Public/Granted literature
- US20170149431A1 INSULATED GATE BIPOLAR TRANSISTOR DRIVING CIRCUIT Public/Granted day:2017-05-25
Information query
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