Invention Grant
- Patent Title: Method for removing of residual charge, X-ray imaging method and apparatus using the method
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Application No.: US14476069Application Date: 2014-09-03
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Publication No.: US09961754B2Publication Date: 2018-05-01
- Inventor: Young Kim , Sunil Kim , Jaechul Park , Kangho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2013-0106307 20130904
- Main IPC: H05G1/30
- IPC: H05G1/30 ; G01N23/04 ; G03G15/22 ; H01L27/146 ; G01T1/24

Abstract:
A method of removing residual charge from a photoconductive material includes applying a first voltage to the photoconductive material to form an electrostatic field during a collection operation in which x-rays are irradiated onto the photoconductive material; and applying a second voltage to the photoconductor to reduce an amount of residual charge therein during a removal operation, the second voltage being different from the first voltage. In one or more example embodiments, the photoconductive material may include Mercury Iodine (Hgl2).
Public/Granted literature
- US20150063544A1 METHOD FOR REMOVING OF RESIDUAL CHARGE, X-RAY IMAGING METHOD AND APPARATUS USING THE METHOD Public/Granted day:2015-03-05
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