Invention Grant
- Patent Title: Method for producing deposition mask
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Application No.: US14744748Application Date: 2015-06-19
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Publication No.: US09962793B2Publication Date: 2018-05-08
- Inventor: Syuji Kudo , Yoshikatsu Yanagawa , Takayuki Goto
- Applicant: V TECHNOLOGY CO., LTD.
- Applicant Address: JP
- Assignee: V TECHNOLOGY CO., LTD.
- Current Assignee: V TECHNOLOGY CO., LTD.
- Current Assignee Address: JP
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: JP2012-279276 20121221
- Main IPC: B23K26/402
- IPC: B23K26/402 ; B23K26/08 ; C23C14/04 ; B05C21/00 ; B23K26/382 ; B23K103/00

Abstract:
The invention provides a method for producing a deposition mask that includes forming of an opening pattern 1 at a predetermined position in a resin film 2 by laser processing so as to penetrate therethrough. The method including the steps of: forming a meniscus of a liquid film 14 between the resin film 2 and a smooth surface 13b of a reference substrate 13 supporting the resin film 2; and after the resin film 2 and the reference substrate 13 are brought into close contact with an adsorption force generated by Laplace pressure, forming the opening pattern 1 by performing the laser processing. Accordingly, it is possible to increase the speed of the laser processing without generating a burr on an edge portion of the opening pattern.
Public/Granted literature
- US20150283651A1 METHOD FOR PRODUCING DEPOSITION MASK Public/Granted day:2015-10-08
Information query
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