Invention Grant
- Patent Title: Method for cutting substrate by laser and laser cutting device
-
Application No.: US14770581Application Date: 2015-05-19
-
Publication No.: US09963376B2Publication Date: 2018-05-08
- Inventor: Dai Dong , Yang Huang , Sheng Tao , Bingbing Chu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Hefei, Anhui
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Hefei, Anhui
- Agency: Ladas & Parry LLP
- Priority: CN201410515814 20140929
- International Application: PCT/CN2015/079307 WO 20150519
- International Announcement: WO2016/050077 WO 20160407
- Main IPC: C03B33/08
- IPC: C03B33/08 ; B23K26/364 ; B23K26/402 ; C03B33/02 ; C03B33/037 ; C03B33/04 ; B23K103/00

Abstract:
A method for cutting a substrate by laser and a laser cutting device are disclosed. The method includes the following steps: engraving a plurality of intercrossed first parallel lines and second parallel lines on a substrate, in which regions for engraving a shape of sub-substrates are encircled between the first parallel lines and the second parallel lines; shaped lines are disposed in the regions; auxiliary split lines are engraved on an outside of the shaped lines; and a minimum distance from end portions of the auxiliary split lines towards the shaped lines to the shaped lines falls within the first default threshold. The method adopts the arrangement of the parallel lines and the auxiliary split lines to help splitting the substrate, and can increase stress rupture points in the process of cutting the substrate, avoid the phenomenon of rupture of the glass substrate in the cutting process, and effectively improve the yield of substrate cutting.
Public/Granted literature
- US20160362325A1 METHOD FOR CUTTING SUBSTRATE BY LASER AND LASER CUTTING DEVICE Public/Granted day:2016-12-15
Information query