Invention Grant
- Patent Title: Method of forming integrated circuit
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Application No.: US15065872Application Date: 2016-03-10
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Publication No.: US09964866B2Publication Date: 2018-05-08
- Inventor: Che-Yi Lin , En-Chiuan Liou , Chia-Hsun Tseng , Yi-Ting Chen , Chia-Hung Wang , Yi-Jing Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105103233A 20160202
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F9/00

Abstract:
A method of forming an integrated circuit includes the following steps. A substrate including a plurality of exposure fields is provided, and each of the exposure field includes a target portion and a set of alignment marks. Measure the set of alignment marks of each exposure field by a measuring system to obtain alignment data for the respective exposure field. Determine an exposure parameter corresponding to each exposure field and an exposure location on the target portion from the alignment data for the respective exposure field by a calculating system. Feedback the alignment data to a next substrate.
Public/Granted literature
- US20170220728A1 METHOD OF FORMING INTEGRATED CIRCUIT Public/Granted day:2017-08-03
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