Invention Grant
- Patent Title: Method for inspecting pattern and an apparatus for manufacturing a semiconductor device using the same
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Application No.: US15051814Application Date: 2016-02-24
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Publication No.: US09965851B2Publication Date: 2018-05-08
- Inventor: Kaiyuan Chi , Kiho Yang , Seunghune Yang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0036822 20150317
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00 ; G06K9/46 ; G06T7/11 ; G06T7/12 ; G06T7/155 ; G06K9/68 ; H01L21/66

Abstract:
The inventive concepts provide a method for inspecting a pattern, a method for manufacturing a semiconductor device, and an apparatus used according to the methods. The method for inspecting a pattern includes detecting a measured image corresponding to a pattern formed on a substrate, detecting a first hot spot corresponding to a ghost image of the measured image, with the first hot spot representing a defect of the pattern, and detecting a second hot spot that has an area that is wider than that of the first hot spot.
Public/Granted literature
- US20160275663A1 METHOD FOR INSPECTING PATTERN AND AN APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2016-09-22
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