Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US15449040Application Date: 2017-03-03
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Publication No.: US09966122B2Publication Date: 2018-05-08
- Inventor: Satoshi Shirotori , Hiroaki Yoda , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Altansargai Buyandalai , Naoharu Shimomura
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-154040 20160804
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/08 ; H01L43/10 ; H01L27/22

Abstract:
According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.
Public/Granted literature
- US20180040357A1 MAGNETIC MEMORY DEVICE Public/Granted day:2018-02-08
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