Invention Grant
- Patent Title: MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts
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Application No.: US15409893Application Date: 2017-01-19
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Publication No.: US09966373B2Publication Date: 2018-05-08
- Inventor: Russell Carlton McMullan , Kamel Benaissa
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/088 ; H01L29/08 ; H01L27/02 ; H01L23/528 ; H01L29/45 ; H01L29/78 ; H01L21/8234 ; H01L21/311 ; H01L21/768 ; H01L29/66 ; H01L21/027
Abstract:
Elongated metal contacts with longitudinal axes that lie in a first direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie in the first direction, and elongated metal contacts with longitudinal axes that lie a second direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie the second direction, where the second direction lies orthogonal to the first direction.
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