Invention Grant
- Patent Title: Semiconductor device, related manufacturing method, and related electronic device
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Application No.: US14994516Application Date: 2016-01-13
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Publication No.: US09966379B2Publication Date: 2018-05-08
- Inventor: Gong Zhang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201510019318 20150114
- Main IPC: H01L29/812
- IPC: H01L29/812 ; H01L29/786 ; H01L27/11 ; H01L29/66 ; H01L29/08
Abstract:
A semiconductor device may include a first inverter, a second inverter, a first access transistor, and a second access transistor. A drain electrode of the first access transistor or a source electrode of the first access transistor may be electrically connected to both an output terminal of the first inverter and an input terminal the second inverter. The drain electrode of the first access transistor may be asymmetrical to the source electrode of the first access transistor with reference to a gate electrode of the first access transistor. A drain electrode of the second access transistor or a source electrode of the second access transistor may be electrically connected to both an output terminal of the second inverter and an input terminal the first inverter.
Public/Granted literature
- US20160204113A1 SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE Public/Granted day:2016-07-14
Information query
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