Invention Grant
- Patent Title: Methods of forming semiconductor devices, including forming a contact including an alkaline earth metal on a semiconductor layer, and related devices
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Application No.: US14226192Application Date: 2014-03-26
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Publication No.: US09966449B2Publication Date: 2018-05-08
- Inventor: Jorge A. Kittl
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L21/285
Abstract:
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a metal contact that includes a heavy alkaline earth metal on an n-type semiconductor layer. The heavy alkaline earth metal may underlie a metal layer and/or a capping layer. Related semiconductor devices are also provided.
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