Invention Grant
- Patent Title: Semiconductor device including fin structure with two channel layers and manufacturing method thereof
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Application No.: US15439035Application Date: 2017-02-22
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Publication No.: US09966469B2Publication Date: 2018-05-08
- Inventor: Tung Ying Lee , Chien-Chang Su , Wang-Chun Huang , Yasutoshi Okuno
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L29/78 ; H01L21/8234 ; H01L29/10 ; H01L21/02 ; H01L29/165 ; H01L29/06 ; H01L21/306 ; H01L29/66 ; H01L27/088 ; H01L21/8238 ; H01L27/092 ; H01L29/267 ; H01L27/146
Abstract:
A method for manufacturing a semiconductor device includes forming a fin structure having a top face and a first side face and a second side face opposite to the first side face, forming a lower cover layer over the first and second side faces, forming an upper cover layer over the first and second side faces, the upper cover layer being spaced apart from the lower cover layer so that exposed regions of the first and second side faces are formed between the lower cover layer and the upper cover layer, and forming first and second semiconductor layers over the exposed regions of the first and second side faces, respectively.
Public/Granted literature
- US20170162696A1 SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURE WITH TWO CHANNEL LAYERS AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-06-08
Information query
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