Invention Grant
- Patent Title: FinFET structure
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Application No.: US15269946Application Date: 2016-09-19
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Publication No.: US09966470B2Publication Date: 2018-05-08
- Inventor: Meng Zhao
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend and Stockton LLP
- Priority: CN201410475129 20140917
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L21/265 ; H01L21/266 ; H01L21/324 ; H01L29/04
Abstract:
A FinFET device includes a substrate and a fin structure having a semiconductor material layer over the substrate and recessed regions on side walls of the fin structure. The recessed regions have openings facing away from the fin structure. The fin structure has a bottom portion below the recessed regions that is wider than a top portion.
Public/Granted literature
- US20170012131A1 FINFET STRUCTURE Public/Granted day:2017-01-12
Information query
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