Invention Grant
- Patent Title: Electronic device, stacked structure, and manufacturing method of the same
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Application No.: US15494680Application Date: 2017-04-24
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Publication No.: US09966472B2Publication Date: 2018-05-08
- Inventor: Junichi Yamaguchi
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2012-108730 20120510
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/16 ; H01L21/78
Abstract:
A stacked structure includes: an insulating substrate; a graphene film that is formed on the insulating substrate; and a protective film that is formed on the graphene film and is made of a transition metal oxide, which is, for example, Cr2O3. Thereby, at the time of transfer of the graphene, polymeric materials such as a resist are prevented from directly coming into contact with the graphene and nonessential carrier doping on the graphene caused by a polymeric residue of the resist is suppressed.
Public/Granted literature
- US20170229583A1 ELECTRONIC DEVICE, STACKED STRUCTURE, AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2017-08-10
Information query
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