Invention Grant
- Patent Title: Light emitting diode structure, light emitting diode device and the manufacturing method thereof
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Application No.: US15357881Application Date: 2016-11-21
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Publication No.: US09966499B2Publication Date: 2018-05-08
- Inventor: I-Chen Chien , Shih-Chang Hsu
- Applicant: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD. , LITE-ON TECHNOLOGY CORPORATION
- Applicant Address: CN Changzhou, Jiangsu Province TW Taipei
- Assignee: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD.,LITE-ON TECHNOLOGY CORPORATION
- Current Assignee: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD.,LITE-ON TECHNOLOGY CORPORATION
- Current Assignee Address: CN Changzhou, Jiangsu Province TW Taipei
- Agency: Li&Cal Intellectual Property (USA) Office
- Priority: CN201610393727 20160603
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/24 ; H01L33/00 ; H01L33/10 ; H01L33/50
Abstract:
A method for manufacturing a light emitting diode structure uses a removable prefilled layer to attach the flip-type chip on a temporary substrate. A growth substrate of the flip-type chip is removed by laser lift-off, and then the light emitting diode structure is attached to a transparent support body. Lastly, the temporary substrate and the prefilled layer are removed.
Public/Granted literature
- US20170352778A1 LIGHT EMITTING DIODE STRUCTURE, LIGHT EMITTING DIODE DEVICE AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2017-12-07
Information query
IPC分类:
