Invention Grant
- Patent Title: Light emitting diode package structure and fabrication method
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Application No.: US15192993Application Date: 2016-06-24
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Publication No.: US09966514B2Publication Date: 2018-05-08
- Inventor: Chen-Ke Hsu , Junpeng Shi , Pei-Song Cai , Zhenduan Lin , Hao Huang , Chenjie Liao , Chih-Wei Chao , Qiuxia Lin
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201510380628 20150702; CN201510513557 20150820
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/50 ; H01L33/54 ; H01L33/62

Abstract:
A light emitting diode package structure allows for an improved light-emitting efficiency by including a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; and a second reflecting material layer surrounding the first transparent material layer. An interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip. A wavelength conversion material layer is over the first reflecting material layer, the flip chip, and the second reflecting material layer.
Public/Granted literature
- US20170005245A1 Light Emitting Diode Package Structure and Fabrication Method Public/Granted day:2017-01-05
Information query
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