A semiconductor integrated circuit device may include a main inverter and a negative bias temperature instability (NBTI) compensating circuit. The main inverter may be configured to receive an input signal. The main inverted may be configured to reverse the input signal. The main inverter may include a PMOS transistor and an NMOS transistor. The NBTI compensating circuit may be configured to receive the input signal. The NBTI compensating circuit may be selectively driven in an operation start time section of the PMOS transistor in the main inverter to compensate a driving force of the PMOS transistor.