Solid-state image pickup device with columns clustered into groups
Abstract:
In a CMOS image sensor, a plurality of bias circuits are dispersedly arranged in an arrangement region of column circuits corresponding to each column of a pixel array. Each bias circuit generates a bias voltage on the basis of a reference current which has been input and supplies the generated bias voltage to the corresponding column circuit 10 which is arranged in the vicinity. Thereby, luminance unevenness of a picked-up image caused by an IR drop of a ground wire for the column circuits is reduced.
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