A technique for forming a metal film having a high work function while suppressing an increase in EOT is provided. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) performing a first cycle a first number of times to form a first metal layer containing a first metal element; and (b) performing a second cycle to form a second metal layer containing a second metal element directly on the first metal layer, wherein a binding energy of second metal element with oxygen is higher than that of the first metal element with oxygen, wherein a cycle including (a) and (b) is performed a second number of times to form a conductive film containing the first metal element and the second metal element on a substrate, the conductive film having: a work function higher than the first metal layer; and a binding energy with oxygen higher than that of the first metal element with oxygen.