Invention Grant
- Patent Title: Method and apparatus for producing large, single-crystals of aluminum nitride
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Application No.: US15231141Application Date: 2016-08-08
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Publication No.: US09970127B2Publication Date: 2018-05-15
- Inventor: Leo Schowalter , Glen A. Slack , Juan Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
- Applicant: Crystal IS, Inc.
- Applicant Address: US NY Green Island
- Assignee: CRYSTAL IS, INC.
- Current Assignee: CRYSTAL IS, INC.
- Current Assignee Address: US NY Green Island
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: B32B3/00
- IPC: B32B3/00 ; C30B25/16 ; H01L29/32 ; C30B23/02 ; C30B11/00 ; C30B23/00 ; C30B29/40 ; H01L33/00 ; H01L29/04 ; H01L29/06 ; H01L29/20 ; C30B25/10 ; C30B25/14 ; C30B25/20 ; H01L21/02 ; H01L29/205 ; H01L29/66 ; H01L29/778 ; H01L33/12 ; H01L33/32 ; H01L33/02
Abstract:
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
Public/Granted literature
- US20170159207A1 METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE Public/Granted day:2017-06-08
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