Invention Grant
- Patent Title: Circuitry for reducing leakage current in configuration memory
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Application No.: US15283011Application Date: 2016-09-30
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Publication No.: US09972368B2Publication Date: 2018-05-15
- Inventor: Bee Yee Ng , Gaik Ming Chan , Ping-Chen Liu , Thien Le
- Applicant: Altera Corporation
- Applicant Address: US CA San Jose
- Assignee: Altera Corporation
- Current Assignee: Altera Corporation
- Current Assignee Address: US CA San Jose
- Agency: Treyz Law Group, P.C.
- Agent Jason Tsai
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C5/06

Abstract:
Integrated circuits may include dual mode memory cells. Dual mode memory cells may be operated in a lookup-table mode or a memory mode. A dual mode memory cell may have configuration ports for supporting a configuration operation and user ports for supporting a user mode operation. When performing configuration operations in the memory mode, the configuration ports may be gated off to prevent existing user data from being accessed. Each column of memory cells may be arranged into groups. Each group of memory cells in a column may be connected to a respective local data line, which is connected to a global data line via a switch. The switch may be selectively activated to short the local data line to the global data line. Configured in this hierarchical data line architecture, leakage at the global data line can dramatically be reduced, and the memory cell read margin is improved.
Public/Granted literature
- US20180096714A1 CIRCUITRY FOR REDUCING LEAKAGE CURRENT IN CONFIGURATION MEMORY Public/Granted day:2018-04-05
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