Invention Grant
- Patent Title: Memory device with shortened pre-charging time for bit-line
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Application No.: US15045941Application Date: 2016-02-17
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Publication No.: US09972370B2Publication Date: 2018-05-15
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0134210 20150922
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C7/12 ; G11C5/06 ; G11C7/10 ; G11C7/18 ; H01L27/11582

Abstract:
The present disclosure may provide a memory device including a page buffer and bit-lines coupled thereto with a less load of the bit-lines. In one aspect of the present disclosure, there is provided a memory device comprising: bit-lines, each bit-line having opposite first and second ends; plugs coupled respectively to the bit-lines, each plug disposed between and excluding the first and second ends; and a page buffer coupled to the plugs.
Public/Granted literature
- US20170084315A1 MEMORY DEVICE WITH SHORTENED PRE-CHARGING TIME FOR BIT-LINE Public/Granted day:2017-03-23
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