Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15419069Application Date: 2017-01-30
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Publication No.: US09972591B2Publication Date: 2018-05-15
- Inventor: Hideki Harano
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2016-070283 20160331
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/00 ; H01L23/31 ; H01L21/56
Abstract:
To improve reliability of a semiconductor device, in a method of manufacturing the semiconductor device, a semiconductor substrate having an insulating film in which an opening that exposes each of a plurality of electrode pads is formed is provided, and a flux member including conductive particles is arranged over each of the electrode pads. Thereafter, a solder ball is arranged over each of the electrode pads via the flux member, and is then heated via the flux member so that the solder ball is bonded to each of the electrode pads. The width of the opening of the insulating film is smaller than the width (diameter) of the solder ball.
Public/Granted literature
- US20170287859A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-10-05
Information query
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