Invention Grant
- Patent Title: Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the same
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Application No.: US15783115Application Date: 2017-10-13
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Publication No.: US09972637B2Publication Date: 2018-05-15
- Inventor: Deyuan Xiao
- Applicant: ZING SEMICONDUCTOR CORPORATION
- Applicant Address: CN Shanghai
- Assignee: ZING SEMICONDUCTOR CORPORATION
- Current Assignee: ZING SEMICONDUCTOR CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Huffman Law Group, PC
- Priority: CN201610120869 20160303
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L21/324 ; H01L27/11568 ; H01L29/792
Abstract:
The present invention relates to a method for preparing vacuum tube flash memory structure, to form a vacuum channel in the flash memory, and using oxide-nitride-oxide (ONO) composite materials as gate dielectric layer, wherein the nitride layer serves as a charge-trap layer to provide a blocking insulating between the gate electrode and the vacuum channel. The present structure exhibits superior program and erase speed as well as the retention time. It also provide with excellent gate controllability and negligible gate leakage current due to adoption ONO as the gate dielectric layer.
Public/Granted literature
- US20180053777A1 METAL-ONO-VACUUM TUBE CHARGE TRAP FLASH (VTCTF) NONVOLATILE MEMORY AND THE METHOD FOR MAKING THE SAME Public/Granted day:2018-02-22
Information query
IPC分类:
