A sensing device, a method for fabrication thereof, and a method for operating the same are disclosed. The sensing device includes a flexible substrate, a first metallization layer, a piezoelectric thin film layer, a second metallization layer, and an insulating layer. The first metallization layer forms at least a source region and at least a drain region. The piezoelectric thin film layer provides a channel region permitting passage of charge carriers between the source region and the drain region. The second metallization layer forms at least a gate electrode and regulates flow of charge carriers through the piezoelectric thin film layer. When subjected to an external force, the flow of charge carriers is modulated in response to a strain in the piezoelectric thin film layer. The force is measured as a correlation between the applied force and the modulation of the flow of charge carriers.