A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes an electro-wetting-on-dielectric (EWOD) device. The EWOD device includes a top portion over a bottom portion and a channel gap between the top portion and the bottom portion. The bottom portion includes a driving dielectric layer over a first electrode, a second electrode and a first separating portion of an ILD layer between the first electrode and a second electrode. The driving dielectric layer has a first thickness less than about 1,000 Å. An EWOD device with a driving dielectric layer having a first thickness less 1000 Å requires a lower applied voltage to alter a shape of a droplet within the device and has a longer operating life than an EWOD device that requires a higher applied voltage to alter the shape of the droplet.