Invention Grant
- Patent Title: Techniques for manipulating patterned features using ions
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Application No.: US15142526Application Date: 2016-04-29
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Publication No.: US09984889B2Publication Date: 2018-05-29
- Inventor: Simon Ruffell , Huixiong Dai , Jun Lang , John Hautala
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3065 ; H01L21/308 ; H01L21/768

Abstract:
A method may include providing a surface feature on a substrate, the surface feature comprising a feature shape a feature location, and a dimension along a first direction within a substrate plane; depositing a layer comprising a layer material on the surface feature; and directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane, wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first portion of the surface feature and do not impact a second portion of the surface feature, and wherein an altered surface feature is generated, the altered surface feature differing from the surface feature in at least one of: the dimension along the first direction, the feature shape, or the feature location.
Public/Granted literature
- US20170263460A1 TECHNIQUES FOR MANIPULATING PATTERNED FEATURES USING IONS Public/Granted day:2017-09-14
Information query
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