Invention Grant
- Patent Title: Silicon carbide semiconductor device
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Application No.: US15307835Application Date: 2014-06-27
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Publication No.: US09985124B2Publication Date: 2018-05-29
- Inventor: Yasushi Takaki , Yoichiro Tarui
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2014/067150 WO 20140627
- International Announcement: WO2015/198468 WO 20151230
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16 ; H01L29/739 ; H01L29/12 ; H01L21/265 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/167
Abstract:
The present invention can reduce an on-resistance while suppressing reduction in a short circuit capacity. The present invention includes a SiC epitaxial layer, a well region, a source region, a channel resistance adjusting region, a gate electrode, an interlayer insulating film, a source electrode, and a drain electrode. The channel resistance adjusting region is sandwiched between the source region and the SiC epitaxial layer in a surface layer of the well region. The channel resistance adjusting region is a region in which a first impurity region is intermittently formed in a direction intersecting a direction in which the source region and the SiC epitaxial layer sandwich the channel resistance adjusting region.
Public/Granted literature
- US20170054017A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2017-02-23
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