Invention Grant
- Patent Title: Hydrogenated p-channel metal oxide semiconductor thin film transistors
-
Application No.: US14863289Application Date: 2015-09-23
-
Publication No.: US09985139B2Publication Date: 2018-05-29
- Inventor: Kenji Nomura
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Weaver Austin Villeneuve & Sampson LLP—QUAL
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/66 ; H01L29/36 ; H01L29/04 ; H01L27/092 ; G09G3/20
Abstract:
This disclosure provides p-type metal oxide semiconductor materials that display good thin film transistor (TFT) characteristics. Also provided are TFTs including channels that include p-type oxide semiconductors, and methods of fabrication. The p-type metal oxide films may be hydrogenated such that they have a hydrogen content of at least 1018 atoms/cm3, and in some implementations, at least 1020 atoms/cm3, or higher. Examples of hydrogenated p-type metal oxide films include hydrogenated tin (II)-based films and hydrogenated copper (I)-based films. The TFTs may be characterized by having one or more TFT characteristics such as high mobility, low subthreshold swing (s-value), and high on/off current ratio.
Public/Granted literature
- US20160133751A1 HYDROGENATED P-CHANNEL METAL OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS Public/Granted day:2016-05-12
Information query
IPC分类:
