Invention Grant
- Patent Title: Air stable infrared photodetectors from solution-processed inorganic semiconductors
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Application No.: US14915426Application Date: 2014-08-29
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Publication No.: US09985153B2Publication Date: 2018-05-29
- Inventor: Franky So , Jesse Robert Manders , Song Chen , Erik D. Klump , Tzhung-Han Lai , Sai-Wing Tsang
- Applicant: University of Florida Research Foundation, Incorporated
- Applicant Address: US FL Gainesville
- Assignee: University of Florida Research Foundation, Incorporated
- Current Assignee: University of Florida Research Foundation, Incorporated
- Current Assignee Address: US FL Gainesville
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2014/053546 WO 20140829
- International Announcement: WO2015/031835 WO 20150305
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/0352 ; H01L31/0296 ; H01L31/032 ; H01L31/101 ; H01L31/0216 ; H01L31/109 ; H01L31/18 ; H01L31/105 ; B82Y20/00 ; B82Y40/00

Abstract:
A photodetector has a photoactive layer of semiconducting inorganic nanoparticles positioned between a hole transport electron blocking layer of a first metal oxide and an electron transport hole blocking layer of a second metal oxide. The nanoparticles are responsive to electromagnetic radiation in at least the infrared region of the spectrum. The first metal oxide can be NiO, and the second metal oxide can be ZnO or TiO2. The metal oxide layers render the photodetector stable in air, even in the absence of an encapsulating coating around the photodetector. The photodetector has a P-I-N structure.
Public/Granted literature
- US20160211392A1 AIR STABLE INFRARED PHOTODETECTORS FROM SOLUTION-PROCESSED INORGANIC SEMICONDUCTORS Public/Granted day:2016-07-21
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