Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15158139Application Date: 2016-05-18
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Publication No.: US09985189B2Publication Date: 2018-05-29
- Inventor: Ryosuke Wakaki
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2015-102078 20150519
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/62 ; H05K1/11 ; H02K3/34 ; H05K3/34

Abstract:
A semiconductor device includes a mounting substrate with a land having a first surface and a second surface higher than the first surface, a side-emission type light emitting device including an external connecting terminal disposed on the first surface, and a bonding member disposed at least on the second surface to bond the external connecting terminal and the land.
Public/Granted literature
- US20160343915A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-11-24
Information query
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