Invention Grant
- Patent Title: Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same
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Application No.: US15603999Application Date: 2017-05-24
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Publication No.: US09985200B2Publication Date: 2018-05-29
- Inventor: Joonmyoung Lee , Whankyun Kim , Eunsun Noh
- Applicant: Joonmyoung Lee , Whankyun Kim , Eunsun Noh
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2016-0098625 20160802
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; H01L43/10 ; H01L43/12 ; G11C11/16 ; H01L43/06 ; H01L43/04 ; H01L43/14 ; H01L27/11507 ; H01L27/11502 ; H01L27/22 ; G11B5/39
Abstract:
A magnetic memory device can include a first electrode and a first magnetic structure that is spaced apart from the first electrode, where the first magnetic structure can include a magnetic pattern therein. An oxidized non-magnetic pattern can be located between the first magnetic structure and the first electrode, where the oxidized non-magnetic pattern can include a non-metallic element having a standard free energy of oxide formation that is less than about that of a standard free energy of oxide formation of Fe.
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