Invention Grant
- Patent Title: Magnetic memory based on spin hall effect
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Application No.: US15451673Application Date: 2017-03-07
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Publication No.: US09985201B2Publication Date: 2018-05-29
- Inventor: Satoshi Shirotori , Hiroaki Yoda , Yuichi Ohsawa , Yuuzo Kamiguchi , Naoharu Shimomura , Tadaomi Daibou , Tomoaki Inokuchi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-181175 20150914
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L43/08 ; H01L43/02 ; G11C11/16 ; H01L27/22 ; H01L43/10

Abstract:
A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.
Public/Granted literature
- US20170179379A1 MAGNETIC MEMORY Public/Granted day:2017-06-22
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