Invention Grant
- Patent Title: Front end circuit
-
Application No.: US15073897Application Date: 2016-03-18
-
Publication No.: US09985586B2Publication Date: 2018-05-29
- Inventor: Sang Hee Kim
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2015-0076251 20150529
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F1/22 ; H03F3/19 ; H04B1/38 ; H03F3/193 ; H03F3/72

Abstract:
A front end circuit includes a bypass circuit comprising a first bypass switch and a second bypass switch configured to bypass a signal to a first terminal according to switching operations of the first bypass switch and the second bypass switch; and an amplifier connected in parallel to the bypass circuit and configured to amplify the signal.
Public/Granted literature
- US20160352289A1 FRONT END CIRCUIT Public/Granted day:2016-12-01
Information query