Invention Grant
- Patent Title: Tunnel field-effect transistor (TFET) based high-density and low-power sequential
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Application No.: US14922072Application Date: 2015-10-23
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Publication No.: US09985611B2Publication Date: 2018-05-29
- Inventor: Daniel H. Morris , Uygar E. Avci , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- Main IPC: H03K3/356
- IPC: H03K3/356 ; H01L29/66 ; H03K3/012 ; H03K3/3562

Abstract:
Described is an apparatus which comprises: a first p-type Tunneling Field-Effect Transistor (TFET); a first n-type TFET coupled in series with the first p-type TFET; a first node coupled to gate terminals of the first p-type and n-type TFETs; a first clock node coupled to a source terminal of the first TFET, the first clock node is to provide a first clock; and a second clock node coupled to a source terminal of the second TFET, the second clock node is to provide a second clock.
Public/Granted literature
- US20170117885A1 TUNNEL FIELD-EFFECT TRANSISTOR (TFET) BASED HIGH-DENSITY AND LOW-POWER SEQUENTIAL Public/Granted day:2017-04-27
Information query
IPC分类: