Invention Grant
- Patent Title: Trapped sacrificial structures and methods of manufacturing same using thin-film encapsulation
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Application No.: US15243031Application Date: 2016-08-22
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Publication No.: US09988265B2Publication Date: 2018-06-05
- Inventor: Emmanuel P. Quevy , Louis Nervegna , Jeremy R. Hui
- Applicant: Semiconductor Manufacturing International Corporation
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B3/00 ; B81B7/00 ; G01N27/22

Abstract:
Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
Public/Granted literature
- US20160355397A1 TRAPPED SACRIFICIAL STRUCTURES AND METHODS OF MANUFACTURING SAME USING THIN-FILM ENCAPSULATION Public/Granted day:2016-12-08
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