Invention Grant
- Patent Title: Method for chemical modification of a graphene edge, graphene with a chemically modified edge and devices including the graphene
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Application No.: US13766876Application Date: 2013-02-14
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Publication No.: US09988274B2Publication Date: 2018-06-05
- Inventor: Won Mook Choi , Byung Hee Hong , Jaeyoung Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2009-0003302 20090115
- Main IPC: B32B9/00
- IPC: B32B9/00 ; C01B31/04 ; B82Y30/00 ; B82Y40/00 ; C07C31/125 ; C07C31/20 ; C07C47/02 ; C07C49/12 ; C07C53/128 ; C07C69/22 ; C01B32/23 ; C01B32/186 ; C01B32/194
Abstract:
A method for chemical modification of graphene includes dry etching graphene to provide an etched graphene; and introducing a functional group at an edge of the etched graphene. Also disclosed is graphene, including an etched edge portion, the etched portion including a functional group.
Public/Granted literature
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