Invention Grant
- Patent Title: Reactive sputter deposition of silicon films
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Application No.: US13887013Application Date: 2013-05-03
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Publication No.: US09988705B2Publication Date: 2018-06-05
- Inventor: Georg J. Ockenfuss
- Applicant: Viavi Solutions Inc.
- Applicant Address: US CA San Jose
- Assignee: VIAVI Solutions Inc.
- Current Assignee: VIAVI Solutions Inc.
- Current Assignee Address: US CA San Jose
- Agency: Harrity & Harrity, LLP
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/10 ; C23C14/34 ; H01J37/34

Abstract:
Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.
Public/Granted literature
- US20130292244A1 REACTIVE SPUTTER DEPOSITION OF DIELECTRIC FILMS Public/Granted day:2013-11-07
Information query
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