Invention Grant
- Patent Title: Apparatus and method for multilayer deposition
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Application No.: US14711989Application Date: 2015-05-14
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Publication No.: US09988711B2Publication Date: 2018-06-05
- Inventor: Alexandre Likhanskii , William Davis Lee , Svetlana B. Radovanov
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: C23C14/46
- IPC: C23C14/46 ; C23C14/34 ; C23C14/22 ; H01J37/34

Abstract:
An apparatus may include an extraction assembly comprising at least a first extraction aperture and second extraction aperture, the extraction assembly configured to extract at least a first ion beam and second ion beam from a plasma; a target assembly disposed adjacent the extraction assembly and including at least a first target portion comprising a first material and a second target portion comprising a second material, the first target portion and second target portion being disposed to intercept the first ion beam and second ion beam, respectively; and a substrate stage disposed adjacent the target assembly and configured to scan a substrate along a scan axis between a first point and a second point, wherein the first target portion and second target portion are separated from the first point by a first distance and second distance, respectively, the first distance being less than the second distance.
Public/Granted literature
- US20160333464A1 APPARATUS AND METHOD FOR MULTILAYER DEPOSITION Public/Granted day:2016-11-17
Information query
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