Invention Grant
- Patent Title: Test pattern layout for test photomask and method for evaluating critical dimension changes
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Application No.: US15094220Application Date: 2016-04-08
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Publication No.: US09989843B2Publication Date: 2018-06-05
- Inventor: Brian N. Caldwell , Yuki Fujita , Raymond W. Jeffer , James P. Levin , Joseph L. Malenfant, Jr. , Steven C. Nash
- Applicant: International Business Machines Corporation , Toppan Printing Co., Ltd.
- Applicant Address: US NY Armonk JP Tokyo
- Assignee: International Business Machines Corporation,Toppan Printing Co., Ltd.
- Current Assignee: International Business Machines Corporation,Toppan Printing Co., Ltd.
- Current Assignee Address: US NY Armonk JP Tokyo
- Agency: Hoffman Warnick LLC
- Agent Steven J. Meyers
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G03F1/50 ; G03F1/78 ; G03F1/70 ; G06F17/50 ; G03F1/44

Abstract:
Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.
Public/Granted literature
- US20160224720A1 TEST PATTERN LAYOUT FOR TEST PHOTOMASK AND METHOD FOR EVALUATING CRITICAL DIMENSION CHANGES Public/Granted day:2016-08-04
Information query
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