Invention Grant
- Patent Title: Memory device for internally performing read-verify operation, method of operating the same, and memory system including the same
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Application No.: US14997888Application Date: 2016-01-18
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Publication No.: US09990149B2Publication Date: 2018-06-05
- Inventor: Taek Kyun Lee , Hyun Ju Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC.
- Priority: KR10-2015-0018715 20150206
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G11C16/10 ; G11C16/34

Abstract:
A method of operating a memory device includes writing initial data to non-volatile memory cells of a non-volatile memory cell array, generating a difference value based on a difference between first data related to the initial data written to the non-volatile memory cells and second data related to the initial data written to the non-volatile memory cells, comparing the difference value with a reference value, and generating and transmitting a status signal indicating that the initial data has been successfully written to a controller when the difference value is less than the reference value. The data may be randomized by the controller or the memory device.
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