Invention Grant
- Patent Title: Data sense amplifier and a memory device with open or folded bit line structure
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Application No.: US14705604Application Date: 2015-05-06
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Publication No.: US09990962B2Publication Date: 2018-06-05
- Inventor: Dong-Keun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0174705 20141208
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/12 ; G11C5/06 ; G11C5/02 ; G11C7/08 ; G11C11/4091 ; G11C11/4094 ; G11C11/4097
Abstract:
A data sense amplifier may include: first and second external nodes, wherein a potential difference occurs between the first and second external nodes when a memory cell is selected; an amplification unit suitable for generating and amplifying a potential difference between first and second nodes in response to the potential difference between the first and second external nodes; and a switching unit suitable for electrically coupling the first and second external nodes to the first and second nodes, respectively, after a predetermined time elapses from when the memory cell is selected.
Public/Granted literature
- US20160163359A1 DATA SENSE AMPLIFIER AND MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2016-06-09
Information query
